A new approach for thin film InP solar cells
- 30 November 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 19 (1), 85-96
- https://doi.org/10.1016/0379-6787(86)90052-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Efficiency considerations for polycrystalline GaAs thin-film solar cellsJournal of Applied Physics, 1986
- Fabrication of high-efficiency n+-p junction InP solar cells by using group VIb element diffusion into p-type InPIEEE Transactions on Electron Devices, 1985
- High efficiency homojunction InP solar cellsApplied Physics Letters, 1985
- High efficiency indium tin oxide/indium phosphide solar cellsApplied Physics Letters, 1985
- Defect Levels and Minority Carrier Diffusion Length in 1-MeV Electron Irradiated n-InPJapanese Journal of Applied Physics, 1984
- Electron Irradiation Damage in Radiation-Resistant InP Solar CellsJapanese Journal of Applied Physics, 1984
- The Effect of Dislocations on the Electron Mobility of GaAsPhysica Status Solidi (a), 1982
- Electron mobility and minority-carrier lifetime of n-InP single crystals grown by liquid-encapsulated Czochralski methodJournal of Applied Physics, 1981
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Theoretical analysis of the series resistance of a solar cellSolid-State Electronics, 1967