Effects of Electrical Forming on the Rectifying Barriers of- and-Germanium Transistors
- 1 February 1950
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (3), 401-402
- https://doi.org/10.1103/physrev.77.401
Abstract
DOI: https://doi.org/10.1103/PhysRev.77.401Keywords
This publication has 1 reference indexed in Scilit:
- Physical Principles Involved in Transistor ActionPhysical Review B, 1949