Theory and experiments on an electroluminescent device constructed in the metal-insulator—Semiconductor geometry

Abstract
A simple model is analyzed to quantitatively describe the operation of a new electroluminescent device constructed in the metal-insulator-semiconductor geometry to which an alternating voltage is applied. Expressions for the average emission intensity, power dissipation, and power efficiency are derived in terms of the operating conditions and material parameters for both the insulator and the semiconductor. From these results the optimum operating conditions for the device are determined and several quantitative criteria for evaluating promising insulators and semiconductors are discussed. Supporting results for devices constructed from GaP with TiO2for the insulator are given.