Vibrational Modes of C60 Fullerene on Si(111)7×7 Surface: Estimation of Charge Transfer from Silicon Dangling Bonds to C60 Molecules
- 1 October 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (10B), L1489
- https://doi.org/10.1143/jjap.33.l1489
Abstract
We have investigated vibrational modes of C60 monolayer film adsorbed on the Si(111)7×7 surface using high-resolution electron-energy-loss spectroscopy in combination with scanning tunneling microscopy. The differences in energies and in oscillator strengths from a thick C60 film (i.e., bulk C60) are discussed in terms of the charge transfer from silicon dangling bonds to C60 molecules. The amount of charge transfer is estimated to be 1±1 electron(s) compared with the infrared absorption spectra of alkaline-doped C60 fullerides and with the weak electron-molecular-vibration coupling calculation.Keywords
This publication has 16 references indexed in Scilit:
- Determination of charge states ofadsorbed on metal surfacesPhysical Review Letters, 1993
- Vibrational and electronic properties of monolayer and multilayer fullerene C60 films on rhodium (111)The Journal of Physical Chemistry, 1993
- In situinfrared transmission study of Rb- and K-doped fullerenesPhysical Review B, 1993
- Electron-vibrational mode coupling in K3C60 from IR-transmittance and reflectivitySolid State Communications, 1993
- Double domain solidon Si(111)7×7Physical Review Letters, 1993
- Scanning Tunneling Microscopy of C60 on the Si(111)7×7 SurfaceJapanese Journal of Applied Physics, 1992
- Elementary excitations offrom the far infrared to the far vacuum ultraviolet studied by high-resolution electron-energy-loss spectroscopyPhysical Review B, 1992
- Charged-phonon absorption in dopedPhysical Review B, 1992
- Normal vibrational modes of buckminsterfullereneThe Journal of Physical Chemistry, 1988
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986