Raman coupling-parameter variation in amorphous silicon
- 15 March 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (9), 6220-6222
- https://doi.org/10.1103/physrevb.39.6220
Abstract
The Raman coupling-parameter variation of an a-Si film has been obtained from depolarized–Raman-scattering measurements by using inelastic–neutron-scattering results. The frequency variation is found to be quite similar to that of a-Ge with appropriate frequency scaling. The coupling parameter is utilized to calculate from the Raman spectra the approximate density of states of a maximally ordered, chemical-vapor-deposited a-Si film. The resulting density of states is shown to be in good agreement with the theoretical density of states of a Beeman model which is estimated to have a similar bond-angle deviation.Keywords
This publication has 12 references indexed in Scilit:
- Dynamics of tetrahedral networks: Amorphous Si and GePhysical Review B, 1988
- Vibrational spectrum of amorphous silicon: Experiment and computer simulationPhysical Review B, 1987
- Raman coupling-parameter variation in amorphous germaniumPhysical Review B, 1987
- Raman scattering and short range order in amorphous germaniumSolid State Communications, 1985
- Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scatteringJournal of Non-Crystalline Solids, 1984
- Raman scattering studies in dilute and concentrated a-Si1-xHx alloysJournal of Non-Crystalline Solids, 1983
- Phonon density of states of amorphous siliconJournal of Non-Crystalline Solids, 1983
- Structural order in anneal-stable amorphous siliconPhysical Review B, 1982
- Low frequency coupling constants for Raman scattering in amorphous solidsSolid State Communications, 1973
- Multiphonon Raman Spectrum of SiliconPhysical Review B, 1973