Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide

Publisher Website

1 January 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 761-763
https://doi.org/10.1109/iedm.1985.191088

Abstract

No abstract available

Keywords

Cited by 9 articles