Dry development of Se-Ge inorganic photoresist

Abstract

Striking rate differences in gaseous plasma etching is found between undoped and Ag‐photodoped Se‐Ge inorganic photoresist. After the Ag photodoping, the plasma etch rate almost disappears and the etch rate ratio reaches 370:1. This leads to the ’’dry development’’ of the Se‐Ge inorganic resists. It is shown that by using the plasma etching technique, fine pattern delineation of less than 1‐μm linewidth is easily possible. Several advantages over wet chemical processing are expected in process simplification and reproducibility.