Binding energy for the surface biexcitonic positive ion
- 20 October 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (29), 5723-5728
- https://doi.org/10.1088/0022-3719/16/29/025
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- The Dissociation Energy of the Surface BiexcitonPhysica Status Solidi (b), 1980
- Complicated quasi-particle complexes in thin semiconductor filmsThin Solid Films, 1979
- Observation of cyclotron resonance absorptions due to excitonic ion and excitonic molecule ion in siliconSolid State Communications, 1977
- Inelastic low-energy electron diffraction from a silicon (111) 7 × 7 surfacePhysical Review B, 1975
- Excitonic Molecule. II. The Case of Anisotropic Effective MassJournal of the Physics Society Japan, 1973
- The Excitonic MoleculePhysical Review B, 1973
- Excitonic Molecule. I. Calculation of the Binding EnergyJournal of the Physics Society Japan, 1972
- Zur Quantentheorie des Mehrelektronensystems im schwingenden Gitter. IThe European Physical Journal A, 1956
- Wave Mechanical Treatment of the Molecule Li2+The Journal of Chemical Physics, 1935