Two-Photon Absorption and Photoconductivity in GaAs and InP
- 1 January 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (1), 18-20
- https://doi.org/10.1063/1.1653960
Abstract
Absorption and photoconductivity in GaAs and InP have been studied as functions of light intensity I up to 20 MW/cm2 at 1.06 μ. The two‐photon‐absorption coefficient is determined to be ≈ 0.3I cm−1 for n‐GaAs and ≈ 0.2I cm−1 for n‐InP. These values are much larger than that predicted by the existing theories. For the n‐InP samples, the absorption by the two‐photon‐excited free carriers is found to be important, giving an absorption coefficient of ≈ 0.15I2 cm−1. From the photoconductivity measurements, the concentration and the absorption cross section of holes are determined.Keywords
This publication has 5 references indexed in Scilit:
- Multi‐photon interband optical transitions in crystalsPhysica Status Solidi (b), 1971
- THEORY OF TWO-PHOTON ABSORPTIONCanadian Journal of Physics, 1967
- Optical Double-Photon Absorption in CdSPhysical Review B, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Nonlinear Optical EffectsPhysical Review B, 1962