Piezoresistive Effect in Indium Antimonide
- 1 September 1957
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 107 (5), 1281-1282
- https://doi.org/10.1103/physrev.107.1281
Abstract
Room-temperature measurements on the variation of resistivity of pure InSb with hydrostatic and uniaxial stress were made to determine the piezoresistive and elastoresistive coefficients of pure InSb. The results are consistent with a spherical conduction-band model.Keywords
This publication has 5 references indexed in Scilit:
- Effect of Pressure on the Electrical Conductivity of InSbPhysical Review B, 1955
- Effect of Pressure on the Electrical Properties of Indium AntimonidePhysical Review B, 1955
- Cyclotron and Spin Resonance in Indium AntimonidePhysical Review B, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954
- The Magnetoresistance Effect in InSbPhysical Review B, 1953