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Measurements of the influence of the nd product on the Gunn effect
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Measurements of the influence of the nd product on the Gunn effect
Measurements of the influence of the nd product on the Gunn effect
AS
Andreas Schlachetzki
Andreas Schlachetzki
KM
Klaus Mause
Klaus Mause
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1 January 1972
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 8
(26)
,
640-642
https://doi.org/10.1049/el:19720463
Abstract
Measurements of the effect of the nd product on domain formation in planar Gunn devices on GaAs are reported. Starting at nd = 1012 cm−2, the Gunn effect decreases to zero at nd = 1011 cm−2.
Keywords
GUNN DEVICES
ELECTRIC CURRENT MEASUREMENT
GAAS
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Cited by 11 articles