High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications

1 January 2006

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.2006.1705237

Abstract

[[abstract]]Using micro-crystallized high-k SrTiO3 on N+-treated TaN, very high 28 fF/mum2 capacitance density, low voltage linearity (alpha) of 92 ppm/V2 and small leakage of 3times10-8 A/cm2 at 2V are beyond ITRS spec of analog capacitor at year 2018. Further improving to 44 fF/mum2 and low alpha of 54 ppm/V2 are obtained for higher speed analog/RF ICs at 2 GHz[[fileno]]2010113010131[[department]]物理

This publication has 1 reference indexed in Scilit:

Very high K and high density TiTaO MIM capacitors for analog and RF applications
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005

Cited by 15 articles