Ion implantation into insulators: charge-removal studies using ion-induced characteristic x rays

Abstract
The effectiveness of a number of charge‐removal techniques during ion implantation into insulators has been examined by monitoring the ion‐induced characteristic x‐ray emission of target atoms during protonimplantation. Successful removal of charge buildup occurs for samples which are coated with a thin conductingsurface layer and for samples which have intimate contact between the implanted region and a conducting mask and are flooded with a defocused ion beam.