Fast anisotropic etching of silicon in an inductively coupled plasma reactor
- 10 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2), 148-150
- https://doi.org/10.1063/1.102127
Abstract
A 13.56 MHz rf inductively coupled diffusion plasma confined by a weak magnetic field is shown to produce high etch rates and high plasma densities. With a substrate bias of −160 V and 1 mTorr of pure SF6, silicon has been etched anisotropically at a rate of 0.7 μm min−1 with a selectivity to SiO2 of about 5.Keywords
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