GaxIn1−xAsyP1−y/Gaxʹ,In1−xʹ,Asyʹ,P1−yʹ, DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm
- 1 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (14), 602-603
- https://doi.org/10.1049/el:19820413