GaxIn1−xAsyP1−y/Gaxʹ,In1−xʹ,Asyʹ,P1−yʹ, DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm

Abstract

GaxIn1−xAsyP1−y/Gax′,In1−x′,Asy′,P1−y′ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670–680 nm at room temperature.