Classification of Disorder and Extrinsic Order in Polymers By Resonant Raman Scattering
- 7 January 1985
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (1), 75-78
- https://doi.org/10.1103/physrevlett.54.75
Abstract
Resonant Raman scattering is used to quantify the effect of disorder and extrinsic order on Peierls systems such as . We introduce " plots" in which the phonon and gap distribution are related and characterize the system by the functional dependence of the gap on the coupling . For cis-rich trans- the disorder is extrinsic with energy and . For all trans- the plot yields intrinsic disorder, i.e., variation in the coupling. cis- is ordered with a 5% extrinsic gap of the full energy gap of 1.95 eV.
Keywords
This publication has 10 references indexed in Scilit:
- Charge storage in doped poly(thiophene): Optical and electrochemical studiesPhysical Review B, 1984
- Raman scattering and infrared phonons in polyacetyleneSynthetic Metals, 1984
- Solitons in the Peierls condensate: Phase solitonsPhysical Review B, 1984
- Peierls distortion and vibrational spectra in undoped and doped trans-polyacetyleneSolid State Communications, 1983
- Resonant Raman Scattering from Amplitude Modes intrans-and -Physical Review Letters, 1983
- Optical absorption from polarons in a model of polyacetylenePhysical Review B, 1983
- Resonance raman results in polyacetyleneMolecular Crystals and Liquid Crystals, 1982
- Photoexcitations in polyacetylenePhysical Review B, 1981
- Resonance Raman Scattering from Neutral and Doped PolyacetylenePhysica Status Solidi (b), 1980
- Electric field depinning of charge density wavesPhysical Review B, 1979