Electric field effects and screening in mesoscopic bismuth wires
- 2 December 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (48), 9705-9711
- https://doi.org/10.1088/0953-8984/3/48/012
Abstract
Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires.Keywords
This publication has 11 references indexed in Scilit:
- Universal scaling of nonlocal and local resistance fluctuations in small wiresPhysical Review B, 1990
- Tunable Aharonov-Bohm effect in an electron interferometerPhysical Review B, 1989
- Normal-metal Aharonov-Bohm effect in the presence of a transverse electric fieldPhysical Review Letters, 1987
- Magnetic flux effects in disordered conductorsReviews of Modern Physics, 1987
- Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic fieldPhysical Review B, 1987
- Sensitivity of the Conductance of a Disordered Metal to the Motion of a Single Atom: Implications forNoisePhysical Review Letters, 1986
- Magnetoresistance Fluctuations in Mesoscopic Wires and RingsPhysical Review Letters, 1985
- Generalized many-channel conductance formula with application to small ringsPhysical Review B, 1985
- Properties of electrons in bismuthUspekhi Fizicheskih Nauk, 1977
- de Haas-van Alphen Effect and Fermi Surface in AntimonyPhysical Review B, 1966