"Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7×7 Reconstruction
- 18 July 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (3), 199-202
- https://doi.org/10.1103/physrevlett.51.199
Abstract
The silicon (111) 7×7 surface reconstruction has been observed by surface-sensitive transmission-electron microscopy. The topography of the reconstructed surface is accounted for by the cooperative motion of surface atoms over large areas via a new process involving the generation of "surface dislocations" to relieve the backbond-induced surface stresses.Keywords
This publication has 12 references indexed in Scilit:
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Observation of atomic steps of (111) surface of a silicon crystal using bright field electron microscopyUltramicroscopy, 1981
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981
- Structure of Si(111)-(7×7)HPhysical Review Letters, 1981
- Nature of the Si(111)7 × 7 reconstructionPhysical Review B, 1981
- New Model for Reconstructed Si(111) 7 × 7 Surface SuperlatticesPhysical Review Letters, 1980
- Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon SurfacesJapanese Journal of Applied Physics, 1980
- Milk-stool model for Si(111) surface reconstructionJournal of Vacuum Science and Technology, 1979
- Direct resolution of surface atomic steps by transmission electron microscopyPhilosophical Magazine, 1974
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972