Gas Identification by a Single Gas Sensor using Porous Silicon as the Sensitive Material
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R), 5840
- https://doi.org/10.1143/jjap.34.5840
Abstract
The peak frequency of the dielectric loss angle of gas molecules adsorbed in a porous silicon gas sensor having a 2.4 nm pore radius is found to vary inversely proportional to the third power of the gas molecular radius. Peak frequency is extremely sensitive to the pore radius, becoming about one order of magnitude higher for a pore radius of 1 nm. The temperature dependence of the peak frequency in the range of 0 to 25 °C was also determined.Keywords
This publication has 7 references indexed in Scilit:
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985
- Formation Mechanism of Porous Silicon Layer by Anodization in HF SolutionJournal of the Electrochemical Society, 1980
- Adsorption of water vapour on α-Fe2O3Discussions of the Faraday Society, 1971
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956
- LX. On the equilibrium of vapour at a curved surface of liquidJournal of Computers in Education, 1871