In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry
- 11 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (20), 2543-2545
- https://doi.org/10.1063/1.105947
Abstract
We have developed techniques to determine the near‐infrared to near‐ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a‐Si:(H)] using real‐time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to ∼50 Å a‐Si:H films prepared by plasma‐enhanced chemical vapor deposition, and to ∼250 Å pure a‐Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.Keywords
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