Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)
- 31 July 2011
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (7), 1365-1372
- https://doi.org/10.1016/j.mee.2011.03.012
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education (T206B1205)
- Singapore University of Technology and Design (SRG ASPE 2010 004)
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