It is shown that information can be transferred from one strip to another across a finite gap in which the carrier wave is subject to rapid decay. Each region in which a metal strip is located above the semiconductor, and insulated from it, is treated as an individual f.e.t. amplifier, exciting in the semiconductor a conduction current which flows into the adjacent similar region. Hence the carrier-wave decay between strips is unimportant. The effect of substituting ohmic contacts for the insulated ‘gates’ is discussed as an extension of this theory.