Graded band-gap Cu(In,Ga)Se2 thin-film solar cell absorber with enhanced open-circuit voltage
- 27 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (13), 1824-1826
- https://doi.org/10.1063/1.110675
Abstract
An important development in polycrystalline Cu(In,Ga)Se2 (CIGS) thin‐film photovoltaic solar cells is the attainment of a high voltage device simultaneous with state‐of‐the‐art conversion efficiency. This letter describes a CIGS‐based solar cell that demonstrates an open‐circuit voltage (Voc) approaching 700 mV and a total‐area conversion efficiency of 12.2%. The high value of Voc was achieved by grading In/Ga through the absorber by a computer‐controlled physical vapor deposition (PVD) process that utilizes variable metal fluxes.Keywords
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