Effect of oxidation gases on the formation of Bi2Sr2CuO6 thin films
- 17 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (25), 2716-2718
- https://doi.org/10.1063/1.104194
Abstract
Three kinds of oxidation gases, O2, N2O, and NO2, have been used during the deposition of Bi2Sr2CuO6 thin films, and the effect of the gases on the film formation has been compared. Ambient N2O with substrate irradiation by ArF excimer laser is effective for lowering the substrate temperature to form an as‐grown film. The as‐grown film formed in N2O, however, has a higher resistivity due to the lower oxygen concentration in the film. The mixed gas of N2O and O2 gives the best result. NO2 is very effective for film formation under low‐pressure conditions, and makes it possible to form a crystallized as‐grown film at such a low pressure of 1×10−4 Torr even in a conventional laser ablation experiment.Keywords
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