Boron and carbon impurities in gallium arsenide
- 15 March 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (6), 505-507
- https://doi.org/10.1016/0038-1098(72)90054-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Observation of a stokes shift of luminescence from the gallium vacancy-donor complex in GaAsSolid State Communications, 1971
- The localized vibrations of boron impurities in indium phosphidePhysics Letters A, 1970
- Local vibrational modes of carbon in GaPJournal of Physics C: Solid State Physics, 1970
- Infra-red absorption of gallium phosphide containing boronJournal of Physics C: Solid State Physics, 1969
- Localized Vibrational Modes in Electron-Irradiated GaAs:SiJournal of Applied Physics, 1969
- Vibrational Modes of Defects in GaPJournal of Applied Physics, 1969
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968
- Liquid encapsulation crystal pulling at high pressuresJournal of Crystal Growth, 1968
- Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1968