Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching

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Abstract
The first optical modulators based on the free-carrier bleaching effect have been demonstrated. In these singlequantum-wen FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3 : 1 extinction ratio for a 10 V change in applied voltage to the gate electrode of a 750 μm FETOM waveguide.