Estimate of the conduction-band X3 effective mass and the average spontaneous emission time of the X1 and X2 conduction-band transitions in GaP crystal
- 1 January 1974
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 35 (8), 1019-1020
- https://doi.org/10.1016/s0022-3697(74)80114-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Free-Carrier Absorption in-Type GaPPhysical Review B, 1970
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eVJournal of Applied Physics, 1967
- Band Structure of Gallium Phosphide from Optical Experiments at High PressurePhysical Review B, 1964
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959
- Spontaneous Radiative Recombination in SemiconductorsPhysical Review B, 1957