Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs
- 15 March 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (12), 7660-7666
- https://doi.org/10.1103/physrevb.55.7660
Abstract
Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates.Keywords
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