Pentacene field-effect transistors on plastic films operating at high temperature above 100°C

Abstract

We have manufactured pentacene field-effect transistors(FETs) on polyimide base films with polyimide gate dielectric layers, and characterized electronic performance and surface morphology with application of heat in the temperature range from 30 to 210 ° C . It is found that mobility of pentacene FETs is enhanced from 0.27 to 0.71 cm 2 ∕ V s when measurementtemperatures varies from 30 to 160 ° C under light-shielding nitrogen environment. To investigate postannealing effects, we have measured transfer curves at 30 ° C after many heat cycles at various temperatures.Mobility is almost constant even after annealing at 130 ° C , showing the excellent stability of the present device at high temperatures.