Optical studies of GaAs:Ti

Abstract

In LEC-grown n-GaAs:Ti, a triple-peaked absorption band at 0.66 eV and a band at 1.01 eV are observed and interpreted as the ³A₂ to ³T₁(F) and to ³T₁(P) transitions of Ti_Ga²⁺. Sharp zero-phonon lines are seen in absorption at 0.566 and 0.569 eV, the former line also being observed as the zero-phonon component of a photoluminescence band. The absence of any Zeeman splitting of the lines up to fields of 10 T indicates that these lines do not arise from Ti_Ga²⁺.