High peak power from (GaAl)As–GaAs double-heterostructure injection lasers
- 15 June 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (12), 638-640
- https://doi.org/10.1063/1.1654537
Abstract
Double‐heterostructure (GaAl)As–GaAs injection lasers have been made with very narrow active regions in the range 0.11–0.14 μm. In addition to giving narrow angular beam widths down to 16°, they show high peak power handling capacity up to 40‐W/mm junction width at threshold current densities of less than 1500 A/cm2. The results are consistent with the relatively wide near‐field distribution perpendicular to the junction plane, which is deduced from the properties of the heterostructure optical waveguide.Keywords
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