Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
- 10 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (2), 167-169
- https://doi.org/10.1063/1.125691
Abstract
We studied a site-control technique for InAsquantum dots(QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organizedmolecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl 2 gas etching,QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAssurfaces act as migration barriers to In adatoms. In an array of holes including 5–6 monolayer steps, a single QD was arranged in each hole.Keywords
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