Bonding of fluorine in amorphous hydrogenated silicon
- 15 December 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (12), 6140-6148
- https://doi.org/10.1103/physrevb.22.6140
Abstract
The infrared spectra of amorphous fluorinated silicon samples (-Si: F,H) have been measured. The following lines were identified (in addition to the hydrogen-induced bands at 2090, 1985, 890, 840, and 630 ): 1010 (Si- stretching); 930 (Si-, Si- stretching); 828 (Si-F stretching); 510 (Si TO mode induced by F); 380 (Si bond bending); 300 (Si-F, Si- wagging). The intensities of these bands were measured as a function of preparation condition and annealing temperature. In addition to the Si molecules trapped in the films during preparation, annealing temperatures above 300 °C produced a transformation of some Si—F groups into Si molecules. Gas-evolution experiments show that fluorine-containing molecules (F, HF, Si) evolve all in one sharp peak around 680°C, near the crystallization point. An average cross section for Si-F vibrations of 11.2 /mmol and bond was obtained in good agreement with similar values in gaseous and solid Si.
Keywords
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