Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial Crystals
- 1 March 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (3A), L136
- https://doi.org/10.1143/jjap.22.l136
Abstract
Liquid phase epitaxy of Ga x In1-x P on (100)-oriented GaAs and GaAs0.8P0.2 substrates has been studied. Results indicate that the solidus compositions of Ga x In1-x P on both substrates tend to be “locked” near the lattice matching composition. This “composition pulling” effect is shown to be consistent with a model that takes account of the contribution of lattice mismatch strain energy.Keywords
This publication has 11 references indexed in Scilit:
- Orientation Dependence of LPE Growth Behavior of GaxIn1-xP on (100) and (111)B GaAs SubstratesJapanese Journal of Applied Physics, 1982
- Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal QualityJapanese Journal of Applied Physics, 1981
- LPE Growth of In1-xGaxP1-zAsz (z ≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and PhotoluminescenceJapanese Journal of Applied Physics, 1981
- Composition studies of MBE GaInP alloys by Rutherford scattering and x-ray diffractionJournal of Applied Physics, 1980
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility GapJournal of the Electrochemical Society, 1978
- Liquid phase epitaxial In1-xGaxP1-zAsz/GaAs1-yPyheterojunction lasersIEEE Journal of Quantum Electronics, 1975
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Electronic Structure and Luminescence Processes in In1−xGaxP AlloysJournal of Applied Physics, 1971
- Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1971