Optical properties of thermally interdiffused MBE-grown GaAs/GaAlAs quantum wells
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 277-280
- https://doi.org/10.1016/0022-0248(89)90401-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Interdiffusion of Al and Ga in (Al,Ga)As/GaAs superlatticesJournal of Vacuum Science & Technology B, 1987
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum WellJapanese Journal of Applied Physics, 1987
- Effects of dielectric encapsulation and As overpressure on Al-Ga interdiffusion in AlxGa1−x As-GaAs quantum-well heterostructuresJournal of Applied Physics, 1987
- Stripe-geometry quantum well heterostructure AlxGa1−xAs-GaAs lasers defined by defect diffusionApplied Physics Letters, 1986
- Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wellsApplied Physics Letters, 1986
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1−xAs interfacesApplied Physics Letters, 1986
- Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealingJournal of Applied Physics, 1983
- Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusionJournal of Applied Physics, 1983
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976