Abstract
A study of the thermal isomerization of cis-(CH)x films has been carried out by means of Raman scattering spectroscopy. It is found that the Raman band profiles, induced by trans-(CH)x films, are dependent both on the temperature and on the isomerization time. The trans sequences first increase in length to a maximum length occurring at the maximum of the d.c. conductivity as measured in similar samples. A degradation of the films is then observed as punctual defects alter the carbon-carbon bond conjugation