Photocapacitance studies in high-purity GaAs
- 16 April 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (2), 671-675
- https://doi.org/10.1002/pssa.2210220234
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Absorption optique de l'arseniure de gallium de type n entre 0,6 et 1,3 eVPhysica Status Solidi (a), 1971
- Observation of a stokes shift of luminescence from the gallium vacancy-donor complex in GaAsSolid State Communications, 1971
- DIRECT OBSERVATION OF THE MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCEApplied Physics Letters, 1969
- Trapping analysis in gallium arsenideSolid State Communications, 1968
- Trapping Effects in Au-n-Type GaAs Schottky Barrier DiodesJapanese Journal of Applied Physics, 1967
- Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier DiodeJapanese Journal of Applied Physics, 1967
- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966