Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3), 144-147
- https://doi.org/10.1007/s11664-999-0004-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Paramagnetic Centers and Dopant Excitation in Crystalline Silicon CarbideApplied Spectroscopy, 1996
- Hole traps in oxide layers thermally grown on SiCApplied Physics Letters, 1996
- Hydrogen-related defects in polycrystalline CVD diamondPhysical Review B, 1996
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Chemical reactions of hydrogenous species in the systemJournal of Non-Crystalline Solids, 1995
- Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defectsJournal of Applied Physics, 1995
- Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour depositionMaterials Science and Engineering B, 1992
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969