Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs-AlGaAs multiple quantum wells
- 1 April 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (7), 692-694
- https://doi.org/10.1063/1.94880
Abstract
The relaxation rate of hot carriers following picosecond photoexcitation in GaAs-AlGaAs multiple quantum well structures is found to be significantly slower than the corresponding rate for bulk GaAs under high excitations. This is confirmed by a detailed comparison of the hot-luminescence tails for the two cases using picosecond pulse and cw photoexcitations.Keywords
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