Vapour deposited films of quinoidal biselenophene and bithiophene derivatives as active layers of n-channel organic field-effect transistors

Abstract

n-Channel OFETs using oligoselenophene- and oligothiophene-based semiconductors as active layers have been successfully fabricated, and the field-effect mobilities for the selenophene-based compounds are found to be higher than those for the thiophene analogues.