In-situ thermoelectric power measurements of UHV deposited amorphous silicon
- 16 August 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 30 (2), K155-K158
- https://doi.org/10.1002/pssa.2210300255
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Influence of evaporation parameters on electrical properties of amorphous germanium and siliconPhysica Status Solidi (a), 1975
- Influence of ion implantation on electrical properties of amorphous Ge and SiPhysica Status Solidi (a), 1975