Growth and characterization of zinc sulfide films by conversion of zinc oxide films with H2S
- 31 October 1989
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 24 (10), 1215-1221
- https://doi.org/10.1016/0025-5408(89)90196-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Homoepitaxial growth of low-resistivity-Al-doped ZnS single crystal films by molecular beam epitaxyJournal of Crystal Growth, 1989
- A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzincJournal of Crystal Growth, 1988
- Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Ion beam sputtering of ZnS thin filmsThin Solid Films, 1987
- ZnS epitaxy on sapphire {110}Thin Solid Films, 1986
- Far‐Infrared Dielectric Function of Zincblende ZnSPhysica Status Solidi (b), 1985
- Carrier density and mobility in CdxZn1−xS chemically sprayed filmsThin Solid Films, 1980
- Far-infrared absorption in cubic ZnSCanadian Journal of Physics, 1976
- Raman Effect in Wurtzite- and Zinc-Blende-Type ZnS Single CrystalsPhysical Review B, 1968
- Infrared reflectivity of zinc oxideJournal of Physics and Chemistry of Solids, 1959