Dependence of the critical temperature for the formation of charge density waves in 2H-NbSe2upon impurity concentration

Abstract

NMR techniques have been used to determine the transition temperature for the onset of the charge density wave state in 2H-NbSe₂ as a function of the residual resistance ratio of the samples. Within the framework of the chosen model, an ultimate transition temperature of 43K is determined for a sample with infinite residual resistance ratio and a critical resistance ratio of 12 below which the charge density wave state does not exist.