Origin of the difference in the open circuit voltage between p-i-n type and n-i-p type hydrogenated amorphous silicon solar cells

Abstract

The origin of the difference in the open circuit voltage V_oc between a p‐i‐n and n‐i‐p type hydrogenated amorphous silicon solar cells is discussed theoretically, considering the interaction of photogenerated free electrons and holes, i.e., the effect of a self‐field. It has been clarified that the self‐field aids the carrier collection in an n‐i‐p cell whereas it impedes the carrier collection in a p‐i‐n cell. This difference in the effect of the self‐field on the photovoltaic process causes the difference in V_oc between these two type cells.