Interface disorder in GaAs/AlGaAs quantum wells grown by MBE
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3), 76-81
- https://doi.org/10.1016/0039-6028(86)90388-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Direct Observation of Lattice Arrangement in MBE Grown GaAs–AlGaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981