Hot electron transport effects in field effect transistors
- 31 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1), 69-73
- https://doi.org/10.1016/0038-1101(78)90116-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- On the mechanism for microwave amplification in ``supercritically'' doped n-GaAsApplied Physics Letters, 1973
- Electron dynamics in short channel field-effect transistorsIEEE Transactions on Electron Devices, 1972
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- The Influence of Boundary Conditions on Current Instabilities in GaAsIBM Journal of Research and Development, 1969
- The Gunn effectReports on Progress in Physics, 1967