Intrinsic (111) surface states of Ge, GaAs, and ZnSe
- 15 January 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (2), 732-737
- https://doi.org/10.1103/physrevb.11.732
Abstract
The intrinsic (111) surface states of Ge, GaAs, and ZnSe are studied using the tight-binding method. The local density of states of atoms on different layers are calculated and the various types of surface states are discussed. The effects of relaxation on the surface states are examined for Ge.Keywords
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