Young's Modulus Of In Situ Phosphorus-doped Polysilicon
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 80-83
- https://doi.org/10.1109/sensor.1995.721749
Abstract
In this paper we present results on the mechanical characterization of in situ phosphorus-doped polysilicon films fabricated using various deposition conditions. Young's modulus of the polysilicon films was extracted by measuring the mechanical response of linear lateral comb-drive resonators.Keywords
This publication has 3 references indexed in Scilit:
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