Determination of deep donor binding energies from their g values
- 30 July 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (21), L645-L650
- https://doi.org/10.1088/0022-3719/15/21/001
Abstract
The g values of simple deep donors in semiconductors tend to decrease with their binding energies. The theoretical background of this rule is discussed. Relevant experimental data for donors in Si and GaP are considered in the light of these results, and the deep level energy of a substitutional sulphur pair in Si is inferred from its g value.Keywords
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