Formation of SiO2 Films by Oxygen-Ion Bombardment
- 1 August 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (8), 737-738
- https://doi.org/10.1143/jjap.5.737
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Infrared Properties of Silicon Monox and Evaporated SiO FilmsJournal of the American Ceramic Society, 1961